PART |
Description |
Maker |
M36W0R6050T1 |
64 Mbit Flash Memory and 32 Mbit PSRAM Multi-Chip Package
|
STMicroelectronics
|
M36L0T8060B1 |
(M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM
|
ST Microelectronics
|
M36L0R7040B0 M36L0R7040T0 |
128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
|
STMicroelectronics
|
M36W0R604040B0ZAQE M36W0R604040B0ZAQF M36W0R604040 |
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package
|
Numonyx B.V
|
M36W0R6050B1ZAQE M36W0R6050B1ZAQF M36W0R6050T1ZAQE |
64 Mbit (4 Mb 16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 16) PSRAM, multi-chip package
|
意法半导
|
M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位(多银行,多层次,突发)闪存32兆位00万16)移动存储芯片,1.8V电源多芯片封 CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 ER 23C 16 12 8 4 SKT RECP WALL CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM From old datasheet system
|
STMicroelectronics N.V. ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
SST34HF3282 |
(SST34HF3244 - SST34HF3284) 32 Mbit Concurrent SuperFlash 4/8 Mbit PSRAM ComboMemory
|
SST
|
SST34HF32A4-70-4E-LSE SST34HF32A4 SST34HF32A4-70-4 |
32 Mbit Concurrent SuperFlash 16 Mbit PSRAM ComboMemory
|
SST[Silicon Storage Technology, Inc]
|
SST34HF1681J-70-4E-LSE SST34HF1641J-70-4E-LSE SST3 |
16 Mbit Concurrent SuperFlash 4/8 Mbit PSRAM ComboMemory
|
Silicon Storage Technology, Inc.
|